SYNTHESIS OF B DOPED AND IN-SITU B DOPED FEW LAYER GRAPHENE BY CHEMICAL VAPOR DEPOSITION TECHNIQUE FOR HYDROGEN PEROXIDE DETECTION
Author(s): Aykut Caglar1, Berdan Ulas2, Abdullah Nadeesh3, Hilal Kıvrak4, Ozlem Sahin5
- 1. Van Yuzuncu Yil University, Faculty of Engineering, Department of Chemical Engineering, Van 65000, Turkey
- 2. Van Yuzuncu Yil University, Faculty of Engineering, Department of Chemical Engineering, Van 65000, Turkey
- 3. Department of Chemical Engineering, Konya Technical University, 42079, Konya, Turkey
- 4. Department of Chemical Engineering, Yüzüncüyɪl University, 65080, Van, Turkey
- 5. Konya Technical University, Faculty of Engineering, Chemical Engineering Department, 42031 Konya, Turkey
Abstract: In this study, boron (B)-doped graphene and insitu B-doped few-layer graphene are deposited on copper (Cu) foil by chemical vapor deposition (CVD) method. Then, B-doped graphene and insitu B-doped few-layer graphene on the Cu foils were coated onto few-layer the indium tin oxide (ITO) electrode for hydrogen peroxide (H2O2) sensor. These electrodes are characterized by Scanning Electron Microscopy-Energy Dispersive X-Ray Analysis (SEM-EDX) and Raman Spectroscopy. In addition, H2O2 sensor is investigated with cyclic voltammetry (CV) and chronoamperometry (CA).