SYNTHESIS OF IN-SITU S DOPED FEW LAYER GRAPHENE BY CHEMICAL VAPOR DEPOSITION TECHNIQUE AND THEIR SUPERIOR GLUCOSE ELECTROOXIDATION ACTIVITY
Author(s): Aykut Caglar1, Berdan Ulas2, Shekiba Muhammady3, Hilal Kıvrak4, Ozlem Sahin5
- 1. Van Yuzuncu Yil University, Faculty of Engineering, Department of Chemical Engineering, Van 65000, Turkey
- 2. Van Yuzuncu Yil University, Faculty of Engineering, Department of Chemical Engineering, Van 65000, Turkey
- 3. Konya Technical University, Department of Chemical Engineering, 42031, Konya, Turkey
- 4. Department of Chemical Engineering, Yüzüncüyɪl University, 65080, Van, Turkey
- 5. Department of Chemical Engineering, Yüzüncüyɪl University, 65080, Van, Turkey
Abstract: In this study, sulfur (S)-doped graphene and insitu S-doped graphene are deposited on copper (Cu) foil by chemical vapor deposition (CVD) method. Then, S-doped graphene and insitu S-doped few-layer graphene on the Cu foils were coated onto few-layer the indium tin oxide (ITO) electrode for glucose electrooxidation. These electrodes are characterized by Scanning Electron Microscopy-Energy Dispersive X-Ray Analysis (SEM-EDX) and Raman Spectroscopy. In addition, glucose electrooxidation was investigated with cyclic voltammetry (CV) and chronoamperometry (CA).